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GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3

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GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3

GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3

  • High quality GaSb single crystal wafers for semiconductor industries. 
  • Size: 2" diameter x 0.45mm,
    • Orientation: (100)
    • Dopping: Zn- doped,
    • Conducting type: P-type.
    • Carrier concentration: (5.8)x10^18 cm^-3
    • Resistivity: 3.9 x10^-3 ohm.cm
    • EPD: < 2x 10^3 cm ^-2
    • Mobility: 270 cm^2/V.S
    • Polish: one side polished.
    • Grown by a special LEC technique
    • Surface finish (RMS or Ra) :   < 5A 
Typical Properties
  •                 Crystal Structure:                                 cubic a = 6.095 Å
  •                 Density:                                                 5.619 g/cm3
  •                 Melting point:                                        710 oC
  •                 Thermal Expansion:                           6.1 x 10 -6 /oK
  •                 Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration
( cm-3)

Mobility
( cm2/V.Sec)

Resistivity
( ohm-cm )

EPD
(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

1.0~3.0 x 1017

200 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<100











Ralated Product

Other GaSb

 InAs

 InP 

 GaAs


 InSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

$1,435.00
GaSb, (100), Zn- doped,, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration: (5.8)x10^18 cm^-3—
$1,435.00

Product Information

Shipping & Returns

Description

  • High quality GaSb single crystal wafers for semiconductor industries. 
  • Size: 2" diameter x 0.45mm,
    • Orientation: (100)
    • Dopping: Zn- doped,
    • Conducting type: P-type.
    • Carrier concentration: (5.8)x10^18 cm^-3
    • Resistivity: 3.9 x10^-3 ohm.cm
    • EPD: < 2x 10^3 cm ^-2
    • Mobility: 270 cm^2/V.S
    • Polish: one side polished.
    • Grown by a special LEC technique
    • Surface finish (RMS or Ra) :   < 5A 
Typical Properties
  •                 Crystal Structure:                                 cubic a = 6.095 Å
  •                 Density:                                                 5.619 g/cm3
  •                 Melting point:                                        710 oC
  •                 Thermal Expansion:                           6.1 x 10 -6 /oK
  •                 Thermal conductivity:                          270 mW / cm.k   at 300K

Dopant

Type

Carrier Concentration
( cm-3)

Mobility
( cm2/V.Sec)

Resistivity
( ohm-cm )

EPD
(cm-2)

Undoped

P

1.0~2.0 x 1017

600 ~ 800

~0.1

<10000

Zn

P+

1.0~3.0 x 1017

200 ~ 500

~0.004

<10000

Te

N

2.0~6.0 x 1017

2500 ~ 3500

~0.05

<10000

High Resistivity

P or N

1.0~2.0 x 1016

460

~ 1.0

<100











Ralated Product

Other GaSb

 InAs

 InP 

 GaAs


 InSb

 Wafer Box

 Film Coater

 RTP Furnaces

 

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