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Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm

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Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm

Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm

Ge Wafer Specification

  • Growing Method:                    CZ
  • Orientation:                            (110) +/_0.5 Deg
  • Wafer Size:                            2" dia x  500 microns  
  • Surface finish (RMS or Ra) :    Two sides optical polished < 30A
  • Doping:                                  Sb doped
  • Conductor type:                      N-type
  • Resistivity:                             0.1-0.5ohm.cm (If you would like to measure the resistivity accurately, 
                                                 please order our     Portable 4 Probe Resistivity Testing Instrument.)                           
  • Package:                               under 1000 class clean room     
     

Typical Properties:

  • Structure:                             Cubic, a = 5.6754 A
  • Density:                               5.323 g/cm3 at room temperature
  • Melting Point:                       937.4 oC
  • Thermal Conductivity:            640

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Ge Wafer (110)N type, Sb doped, 2" dia x 0.5 mm, 2SP Resistivity: 0.1-0.5ohm.cm—
$599.00

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Description

Ge Wafer Specification

  • Growing Method:                    CZ
  • Orientation:                            (110) +/_0.5 Deg
  • Wafer Size:                            2" dia x  500 microns  
  • Surface finish (RMS or Ra) :    Two sides optical polished < 30A
  • Doping:                                  Sb doped
  • Conductor type:                      N-type
  • Resistivity:                             0.1-0.5ohm.cm (If you would like to measure the resistivity accurately, 
                                                 please order our     Portable 4 Probe Resistivity Testing Instrument.)                           
  • Package:                               under 1000 class clean room     
     

Typical Properties:

  • Structure:                             Cubic, a = 5.6754 A
  • Density:                               5.323 g/cm3 at room temperature
  • Melting Point:                       937.4 oC
  • Thermal Conductivity:            640

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

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