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InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

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InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5

2" InAs wafer (P type)

  • 2" InAs wafer    
  • P Type, Zn doped
  • Size:                 5x5x0.45 mm +/-20 microns
  • Orientation:          <111>A
  •  Polishing:             one-side polishd
  • Resistivities:         5.1x10^-2 ohm-cm
  • Packing:                 in 1000 class clean room with wafer container

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (111) A 
  • Orientation Flat                                                 SEMI                    
  • Doping                                                                Zn doped
  • Conductivity type                                               P type
  • Carrier Concentration                                     6.4E17/ cm3
  • Mobility                                                              192 cm2/V.S  
  • Resistivity                                                          5.1x10^-2  Ohm-Cm
  • EPD                                                                    1.9E4 / cm 2
$119.00
InAs (111)A, P Type, Zn doped 5x5 x 0.45 mm, one side polished - IAZncA0505045S1US5—
$119.00

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Description

2" InAs wafer (P type)

  • 2" InAs wafer    
  • P Type, Zn doped
  • Size:                 5x5x0.45 mm +/-20 microns
  • Orientation:          <111>A
  •  Polishing:             one-side polishd
  • Resistivities:         5.1x10^-2 ohm-cm
  • Packing:                 in 1000 class clean room with wafer container

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (111) A 
  • Orientation Flat                                                 SEMI                    
  • Doping                                                                Zn doped
  • Conductivity type                                               P type
  • Carrier Concentration                                     6.4E17/ cm3
  • Mobility                                                              192 cm2/V.S  
  • Resistivity                                                          5.1x10^-2  Ohm-Cm
  • EPD                                                                    1.9E4 / cm 2

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