InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.3mm wafer, 1sp - IPZncA50D035C1US
- InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.3 mm
- Doping: Zn- doped
- Conducting type: S-C-P
- Polish: one side polished
- Resistivity:(3.24-3.29)x10^-1 ohm.cm
- Mobility: 105-110 cm^2/V.S
- EPD: N/A
- Carrier Concerntration:(1.76-1.81) x10^17 /cm^3
- Ra(Average Roughness) : <4 nm
- EPI ready surface and packing
Related Products
Other InP 
|
InSb
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Other InAs
|
GaAs |
GaSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces |
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Product Information
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InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.3mm wafer, 1sp - IPZncA50D035C1US
InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.3mm wafer, 1sp - IPZncA50D035C1US
- InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.3 mm
- Doping: Zn- doped
- Conducting type: S-C-P
- Polish: one side polished
- Resistivity:(3.24-3.29)x10^-1 ohm.cm
- Mobility: 105-110 cm^2/V.S
- EPD: N/A
- Carrier Concerntration:(1.76-1.81) x10^17 /cm^3
- Ra(Average Roughness) : <4 nm
- EPI ready surface and packing
Related Products
| Other InP
|
InSb
|
Other InAs
|
GaAs |
GaSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces |
$1,395.00
InP-(VGF- Grown) (111)A Zn- doped, P-type, 2"x 0.3mm wafer, 1sp - IPZncA50D035C1US—
$1,395.00
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- InP single crystal wafer
- Growing Method: VGF
- Orientation: (111)A
- Size: 2" diameter x 0.3 mm
- Doping: Zn- doped
- Conducting type: S-C-P
- Polish: one side polished
- Resistivity:(3.24-3.29)x10^-1 ohm.cm
- Mobility: 105-110 cm^2/V.S
- EPD: N/A
- Carrier Concerntration:(1.76-1.81) x10^17 /cm^3
- Ra(Average Roughness) : <4 nm
- EPI ready surface and packing
Related Products
| Other InP
|
InSb
|
Other InAs
|
GaAs |
GaSb
|
Wafer Box
|
Film Coater
|
RTP Furnaces |
