Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm
Specifications:
- Single crystal: Si
- Conductive type: N type, undoped
- Resistivity: > 1000 ohm-cm
- Size: 1" diameter x 0.5 mm
- Orientation: (111)
- Polish: one side polished
- Surface roughness: < 5A RMS
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm
Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm
Specifications:
- Single crystal: Si
- Conductive type: N type, undoped
- Resistivity: > 1000 ohm-cm
- Size: 1" diameter x 0.5 mm
- Orientation: (111)
- Polish: one side polished
- Surface roughness: < 5A RMS
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
$45.00
Si (111) 1" dia x 0.5 mm, 1SP, N type undoped, R >1000 ohm-cm—
$45.00
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Specifications:
- Single crystal: Si
- Conductive type: N type, undoped
- Resistivity: > 1000 ohm-cm
- Size: 1" diameter x 0.5 mm
- Orientation: (111)
- Polish: one side polished
- Surface roughness: < 5A RMS
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
