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SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

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SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

Specifications:

  • Film:  SiC Epi film with 3C structure grown by PECVD
    • Thickness:1.0um +/- 10%  
    • Orientation: 3C SiC (111)
    • Surface:  CMP  - film chemical mechanical polished with Ra < 10 Angstrom
    • Type and dopant:  N type, Undoped
    • Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
    • TTV   5-29 
    • Bow  -9 ~ 3 
  • Silicon substrate:   
    • Size: 10x10 x 1.0 mm thickness 
    • Orientation:  (111)
    • Type:N type / P doped 
    • Resistivity:1- 10 ohm.cm
    • Polish: Both sides optical  polished 


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    $249.00
    SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm—
    $249.00

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    Description

    Specifications:

    • Film:  SiC Epi film with 3C structure grown by PECVD
      • Thickness:1.0um +/- 10%  
      • Orientation: 3C SiC (111)
      • Surface:  CMP  - film chemical mechanical polished with Ra < 10 Angstrom
      • Type and dopant:  N type, Undoped
      • Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
      • TTV   5-29 
      • Bow  -9 ~ 3 
    • Silicon substrate:   
      • Size: 10x10 x 1.0 mm thickness 
      • Orientation:  (111)
      • Type:N type / P doped 
      • Resistivity:1- 10 ohm.cm
      • Polish: Both sides optical  polished 


      Related Products

      Thin Films  A-Z

      Crystal wafer A-Z

      Plasma Cleaner

      Wafer Containers

      Dicing saw

      Film Coater

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