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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)

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SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)

SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)

Specifications
 

Device Layer

Size: 

5mmx5mm

Type/Dopant:

 

N type/P-doped

Orientation:

 

<1-0-0>+/-0.5 degree

Thickness:

 

2.5±0.5µm

Resistivity:

 

1-4 ohm-cm

Finish:

Front Side Polished

 

Buried Thermal Oxide:

Thickness:

 

1.0 um +/-  0.1 um

 

Handle Wafers:

Type/Dopant

P type/B-doped

Orientation

 

<1-0-0>+/-0.5 degree

Resistivity:

10-20 ohm.cm

Thickness:

 

625 +/- 15 um

Finish:

 

As received (not polished)
 

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Film Coater
$4.53

Original: $12.95

-65%
SOI Wafer:5x5x0.625mm, 2 .5"m (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped)—

$12.95

$4.53

Product Information

Shipping & Returns

Description

Specifications
 

Device Layer

Size: 

5mmx5mm

Type/Dopant:

 

N type/P-doped

Orientation:

 

<1-0-0>+/-0.5 degree

Thickness:

 

2.5±0.5µm

Resistivity:

 

1-4 ohm-cm

Finish:

Front Side Polished

 

Buried Thermal Oxide:

Thickness:

 

1.0 um +/-  0.1 um

 

Handle Wafers:

Type/Dopant

P type/B-doped

Orientation

 

<1-0-0>+/-0.5 degree

Resistivity:

10-20 ohm.cm

Thickness:

 

625 +/- 15 um

Finish:

 

As received (not polished)
 

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

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