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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

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VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3

  • GaAs single crystal wafer
  • Growing Method:                  VGF
  • Orientation:                           (100)
  • Size:                                     2" dia x 0.5mm
  • Polishing:                             One  side polished
  • Doping:                                Si doped
  • Conductor type:                   N-type
  • Carrier Concentration:        (0.63 - 1.33) x 10^18 /cm^3
  • Mobility:                               (2170 - 2920) cm^2/V.S
  • Resistivity:                           (2.12 - 3.55) E-3  ohm.cm
  • EPD:                                    < 5000cm^2
  • Ra(Average Roughness):    < 0.4 nm
  • EPI ready surface and packing 

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$204.75

Original: $585.00

-65%
VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3—

$585.00

$204.75

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Description

  • GaAs single crystal wafer
  • Growing Method:                  VGF
  • Orientation:                           (100)
  • Size:                                     2" dia x 0.5mm
  • Polishing:                             One  side polished
  • Doping:                                Si doped
  • Conductor type:                   N-type
  • Carrier Concentration:        (0.63 - 1.33) x 10^18 /cm^3
  • Mobility:                               (2170 - 2920) cm^2/V.S
  • Resistivity:                           (2.12 - 3.55) E-3  ohm.cm
  • EPD:                                    < 5000cm^2
  • Ra(Average Roughness):    < 0.4 nm
  • EPI ready surface and packing 

Related Products

Other GaAs


 InSb

 Other InAs

 		 InP 


 GaSb

 Wafer Box

 Film Coater

 RTP Furnaces

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