ZnO (0001) 5x5x0.5mm, 2sp - ZOZ050505S2

ZnO (0001) 5x5x0.5mm, 2sp - ZOZ050505S2

Specifications:

Single crystal ZnO
Size: 5mm x 5mm x 0.5mm
Orientation: (0001) +/- 0.5 ^o, C-plane
Polish: two sides polished, One is terminaed on Zn Face and another is in O face
Surface Roughness: < 5 A
Packed in 1000 class clean room with 100 class plastic bag

Typical Properties

Purity wt% Impurity: wt%	> 99.99 Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002
Crystal Structure	Hexagonal: a= 3.252Å, c = 5.313Å
Growth Method	Hydrothermal
Hardness	4 moh scale
Density	5.7 g/cm³
Melt Point	1975 ^oC
Specific Heat	0.125 cal/gm
Thermoelectric Constant	1200 mV /^oK @ 300 ^oC
Thermal Conductivity	0.006 cal/cm/^oK
Thermal Expansion	2.90 x 10-6/^oK
Transmission Range	0.4 - 0.6 m > 50% at 2 mm
Dislocation Density	<0001> plane <100 / cm²

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ZnO (0001) 5x5x0.5mm, 2sp - ZOZ050505S2

ZnO (0001) 5x5x0.5mm, 2sp - ZOZ050505S2

Specifications:

Single crystal ZnO
Size: 5mm x 5mm x 0.5mm
Orientation: (0001) +/- 0.5 ^o, C-plane
Polish: two sides polished, One is terminaed on Zn Face and another is in O face
Surface Roughness: < 5 A
Packed in 1000 class clean room with 100 class plastic bag

Typical Properties

Purity wt% Impurity: wt%	> 99.99 Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002
Crystal Structure	Hexagonal: a= 3.252Å, c = 5.313Å
Growth Method	Hydrothermal
Hardness	4 moh scale
Density	5.7 g/cm³
Melt Point	1975 ^oC
Specific Heat	0.125 cal/gm
Thermoelectric Constant	1200 mV /^oK @ 300 ^oC
Thermal Conductivity	0.006 cal/cm/^oK
Thermal Expansion	2.90 x 10-6/^oK
Transmission Range	0.4 - 0.6 m > 50% at 2 mm
Dislocation Density	<0001> plane <100 / cm²

Related Products


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

$209.00

ZnO (0001) 5x5x0.5mm, 2sp - ZOZ050505S2—

$209.00

Product Information

Shipping & Returns

Description

Specifications:

Single crystal ZnO
Size: 5mm x 5mm x 0.5mm
Orientation: (0001) +/- 0.5 ^o, C-plane
Polish: two sides polished, One is terminaed on Zn Face and another is in O face
Surface Roughness: < 5 A
Packed in 1000 class clean room with 100 class plastic bag

Typical Properties

Purity wt% Impurity: wt%	> 99.99 Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002
Crystal Structure	Hexagonal: a= 3.252Å, c = 5.313Å
Growth Method	Hydrothermal
Hardness	4 moh scale
Density	5.7 g/cm³
Melt Point	1975 ^oC
Specific Heat	0.125 cal/gm
Thermoelectric Constant	1200 mV /^oK @ 300 ^oC
Thermal Conductivity	0.006 cal/cm/^oK
Thermal Expansion	2.90 x 10-6/^oK
Transmission Range	0.4 - 0.6 m > 50% at 2 mm
Dislocation Density	<0001> plane <100 / cm²

Related Products


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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